Figure of Merit Analysis of Nanostructured Thermoelectric Materials at Room Temperature

Mohammad Mobassar Hossain1, Ahmed Shabab Azfar1, Md. Shahriar Shafat1, U Zzaman Md. Sharif1, Das Avijit2, Saha Atanu Kumar1, Bhuian Belal3

  • 1BRAC University
  • 2The Pennsylvania State University
  • 3National Cheng Kung University



Contributed Papers (Oral)


14:00 - 15:30 | Wed 26 Jul | City Center B | WeO1O7

Nano/Molecular Heat Transfer & Energy Conversion

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In this paper, we mainly focused on analyzing the thermoelectric property i.e. figure of merit of different nanostructured materials in room temperature (300-310 K). Here we studied the transition-metal dichalcogenides, particularly Molybdenum Disulfide (MoS2); Metal Oxides, specifically Zinc Oxide (ZnO); and conventional semiconductor materials, i.e. n-type and p-type Silicon (Si) and Silicon Germanium (SiGe). At first, we calculated the electrical conductance (Ge), by using electronic density functional theory (DFT). Similarly, we calculated the thermal conductance (κ) using Tersoff empirical potential (TEP) model. With these calculated values of Ge and κ and the Seebeck coefficient (S), we calculated the figure of merit (ZT) at different room temperatures. The main findings of our research were the increased ZT of MoS2, which is slightly larger than p-type Si while 2~3 times larger than ZnO and 100 ~ 103 times larger than conventionally used SiGe and n-type Si at room temperatures. We have further investigated a thermoelectric generator (TEG) device with these materials to validate our result.

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