Impact of Dielectric Material and Oxide Thickness on the Performance of Carbon Nanotube Field Effect Transistor

Ayesha Shaukat1

  • 1Balochistan Univeristy of Information Technology

Details

15:30 - 16:15 | Wed 26 Jul | Marquis Ballroom Foyer | WePPP.29

Session: Poster I

Abstract

This paper demonstrates the performance of Carbon Nanotube Field Effect Transistor (CNTFET) in ballistic regime. It shows the effect of dielectric material and oxide thickness on different performance parameters of device like Carrier Injection Velocity (vinj), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), Transconductance (gm), Output Conductance (gd) and Voltage Gain (Av). The results illustrate that although Silicon dioxide (SiO2) has lowest SS, but still it cannot be used as a dielectric medium in CMOS technology due to high DIBL, lower gm, gd and Av. On the other hand, Zarconium Oxide (ZrO2), Hafnium Oxide (Hf02) and Titanium oxide (TiO2) seem to be better options for dielectric medium of the device. The impact of the said changes is also observed and analyzed in I-V characteristics of the device. Keywords: Carbon Nanotubes,CNTFET, Transconductance, DIBL, Subthreshold Swing, Output Conductance, Voltage gain, Ballistic regime, FETTOY