15:30 - 16:15 | Wed 26 Jul | Marquis Ballroom Foyer | WePPP.28
In this work, we first calculate the effects of uniaxial strain on polar optical phonon (POP) scattering rates in mon-olayer MoS2. We then study the effects of strain on electron transport in a monolayer MoS2 based FET device employing a fully 3-D particle based quantum-corrected Monte Carlo device simulator. Our results show that, for both E+ and E- Raman modes, the current first increases for up to 4% of applied strain, then it drops as the strain is further increased.