Asymmetric Characteristic Fluctuation of Undoped Gate-All-Around Nanowire MOSFETs Induced by Random Discrete Dopants Inside Source/Drain Extensions

Wen-Li Sung1, Li Yiming2

  • 1National Chiao Tung University
  • 2Tohoku University

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Contributed Papers (Oral)

Sessions

14:00 - 15:30 | Wed 26 Jul | Grand Ballroom #5 | WeO1O5

Nanoelectronics I

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Abstract

We perform experimentally validated statistical device simulation to explore characteristic fluctuation induced by random discrete dopants (RDDs) inside the source / drain extensions of undoped gate-all-around silicon nanowire MOSFETs. The engineering findings of this study indicate that both the DC and dynamic characteristic fluctuation caused by RDDs of the drain extension has relatively smaller variability than that caused by RDDs of the source extension. It could be attributed to the effect of random position of RDDs appearing in the source / drain extensions. Compared to RDDs of the source extension, fluctuations of voltage gain and cut-off frequency of the explored gate-all-around silicon nanowire MOSFET circuit induced by RDDs of the drain extension can be significantly reduced from 24.3% and 20.7% to 0.9% and 2.2%, respectively.

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