Contributed Papers (Oral)
14:00 - 15:30 | Wed 26 Jul | Grand Ballroom #4 | WeO1O4
In this work, we develop and employ a multiscale-multiphysics simulator (based on coupled VFF molecular me¬chanics, 10-band sp3s*¬spin tight-binding formalism, many-body full configuration interaction, and a TCAD transport module) to study and compare the performance of realistically-sized multiple-quantum-well wurtzite InGaN LEDs in polar (c-plane) and nonpolar (a-plane) crystallographic directions. The a-plane device exhibited smaller yet non-vanishing internal fields and higher optical transition rate as compared to the c-plane counterpart.
No information added