Multiscale-Multiphysics Modeling of Nonpolar InGaN LEDs

Nishat Md Rezaul Karim1, Tankasala Archana2, Neerav Kharche3, Rahman Rajib4, Shaikh Ahmed4

  • 1Purdue University, West Lafayette
  • 2Rensselaer Polytechnic Institute
  • 3Purdue University
  • 4Southern Illinois University at Carbondale

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Contributed Papers (Oral)

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14:00 - 15:30 | Wed 26 Jul | Grand Ballroom #4 | WeO1O4

Modeling and Simulation of Nanostructures and Nanodevices I

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Abstract

In this work, we develop and employ a multiscale-multiphysics simulator (based on coupled VFF molecular me¬chanics, 10-band sp3s*¬spin tight-binding formalism, many-body full configuration interaction, and a TCAD transport module) to study and compare the performance of realistically-sized multiple-quantum-well wurtzite InGaN LEDs in polar (c-plane) and nonpolar (a-plane) crystallographic directions. The a-plane device exhibited smaller yet non-vanishing internal fields and higher optical transition rate as compared to the c-plane counterpart.

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