Assessment of Si/SiGe PMOS Schottky Contacts through Atomistic Tight Binding Simulations: Can We Achieve the 1E-9 Ohm-Cm2 Target ?

Details

14:00 - 14:30 | Wed 26 Jul | Grand Ballroom #4 | WeO1O4.1

Session: Modeling and Simulation of Nanostructures and Nanodevices I

Abstract

With continuous shrinking of devices in accordance with Moore's law, metal-semiconductor resistivity starts playing an important role for device performance. To meet ITRS target of 1E-9 ohm-cm2 by 2023, it is important to evaluate the effect of different device parameters such as doping concentration, Schottky barrier height, strain and SiGe mole fraction on contact resistivity. In this work, such a resistivity study has been done on Si/SiGe PMOS contacts through 10-band atomistic tight binding quantum transport simulations. Optimum target values for barrier height as a function of doping concentration are obtained.