Highly-Sensitive Plasmonic Nano-Ring Transistor for Monolithic Terahertz Active Antenna

Ryu Min Woo¹, Patel Ramesh², Ahn Sang Hyo², Jeon Hyeong Ju³, Choe Mun Seok², Kyung Rok Kim², E-San Jang¹

¹Ulsan National Institute of Science and Technology
²UNIST
³Ulsan National Institute of Science and Technology (UNIST)

Details

11:15 - 11:30 | Wed 26 Jul | Grand Ballroom | WeAPPL.4

Session: Award Session I

Abstract

We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular active antenna, which is designed for a 0.12-THz resonance frequency, we experimentally demonstrated the highly-enhanced responsivity (Rv) > 1 kV/W (x 5) and reduced noise-equivalent power (NEP) < 10 pW/Hz^0.5 (x 1/10).